SIS903DN-T1-GE3 Pagpepresyo (USD) [201147pcs Stock]
- 1 pcs$0.18388
- Bilang ng Bahagi:
- SIS903DN-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET DUAL P-CHAN POWERPAK 1212.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Mga Module and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIS903DN-T1-GE3 electronic components. SIS903DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS903DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS903DN-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIS903DN-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET DUAL P-CHAN POWERPAK 1212
Serye :
TrenchFET® Gen III
Katayuan ng Bahagi :
Active
Uri ng FET :
2 P-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
20.1 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2565pF @ 10V
Kapangyarihan - Max :
2.6W (Ta), 23W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
PowerPAK® 1212-8 Dual
Package ng Tagabigay ng Device :
PowerPAK® 1212-8 Dual
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