DF23MR12W1M1B11BOMA1 Pagpepresyo (USD) [998pcs Stock]
- 1 pcs$46.57521
- Bilang ng Bahagi:
- DF23MR12W1M1B11BOMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET MODULE 1200V 25A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga TRIAC and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies DF23MR12W1M1B11BOMA1 electronic components. DF23MR12W1M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for DF23MR12W1M1B11BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF23MR12W1M1B11BOMA1 Mga katangian ng produkto
Bilang ng Bahagi :
DF23MR12W1M1B11BOMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET MODULE 1200V 25A
Serye :
CoolSiC™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Silicon Carbide (SiC)
Drain sa Source Voltage (Vdss) :
1200V (1.2kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
25A
Rds On (Max) @ Id, Vgs :
45 mOhm @ 25A, 15V
Vgs (th) (Max) @ Id :
5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs :
620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 800V
Kapangyarihan - Max :
20mW
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
Module
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