Vishay Siliconix - SI4501BDY-T1-GE3

KEY Part #: K6525430

SI4501BDY-T1-GE3 Pagpepresyo (USD) [344842pcs Stock]

  • 1 pcs$0.10726
  • 2,500 pcs$0.10093

Bilang ng Bahagi:
SI4501BDY-T1-GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET N/P-CH 30V/8V 8SOIC.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Arrays, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Single and Diode - Zener - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SI4501BDY-T1-GE3 electronic components. SI4501BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4501BDY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4501BDY-T1-GE3 Mga katangian ng produkto

Bilang ng Bahagi : SI4501BDY-T1-GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET N/P-CH 30V/8V 8SOIC
Serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : N and P-Channel, Common Drain
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 30V, 8V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 12A, 8A
Rds On (Max) @ Id, Vgs : 17 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 805pF @ 15V
Kapangyarihan - Max : 4.5W, 3.1W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device : 8-SOIC