SSM6N36FE,LM Pagpepresyo (USD) [1169017pcs Stock]
- 1 pcs$0.03498
- 4,000 pcs$0.03480
- Bilang ng Bahagi:
- SSM6N36FE,LM
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 0.5A ES6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga TRIAC and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage SSM6N36FE,LM electronic components. SSM6N36FE,LM can be shipped within 24 hours after order. If you have any demands for SSM6N36FE,LM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6N36FE,LM Mga katangian ng produkto
Bilang ng Bahagi :
SSM6N36FE,LM
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET 2N-CH 20V 0.5A ES6
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
500mA
Rds On (Max) @ Id, Vgs :
630 mOhm @ 200mA, 5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds :
46pF @ 10V
Kapangyarihan - Max :
150mW
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-563, SOT-666
Package ng Tagabigay ng Device :
ES6 (1.6x1.6)
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