Infineon Technologies - IPG20N04S4L08AATMA1

KEY Part #: K6525271

IPG20N04S4L08AATMA1 Pagpepresyo (USD) [161546pcs Stock]

  • 1 pcs$0.22896
  • 5,000 pcs$0.21004

Bilang ng Bahagi:
IPG20N04S4L08AATMA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET 2N-CH 8TDSON.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Espesyal na Pakay, Mga module ng Power driver, Transistor - IGBTs - Arrays, Diode - Mga Rectifier ng Bridge and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPG20N04S4L08AATMA1 electronic components. IPG20N04S4L08AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N04S4L08AATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPG20N04S4L08AATMA1 Mga katangian ng produkto

Bilang ng Bahagi : IPG20N04S4L08AATMA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET 2N-CH 8TDSON
Serye : Automotive, AEC-Q101, OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 20A
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3050pF @ 25V
Kapangyarihan - Max : 54W
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-PowerVDFN
Package ng Tagabigay ng Device : PG-TDSON-8-10