SI6562CDQ-T1-GE3 Pagpepresyo (USD) [193304pcs Stock]
- 1 pcs$0.19134
- 3,000 pcs$0.17968
- Bilang ng Bahagi:
- SI6562CDQ-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 20V 6.7A 8-TSSOP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Diode - Zener - Arrays, Diode - Mga Rectifier ng Bridge, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Single, Transistors - IGBTs - Single and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI6562CDQ-T1-GE3 electronic components. SI6562CDQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6562CDQ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI6562CDQ-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI6562CDQ-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N/P-CH 20V 6.7A 8-TSSOP
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6.7A, 6.1A
Rds On (Max) @ Id, Vgs :
22 mOhm @ 5.7A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
850pF @ 10V
Kapangyarihan - Max :
1.6W, 1.7W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-TSSOP (0.173", 4.40mm Width)
Package ng Tagabigay ng Device :
8-TSSOP
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