Infineon Technologies - IRF8513TRPBF

KEY Part #: K6524186

[3916pcs Stock]


    Bilang ng Bahagi:
    IRF8513TRPBF
    Tagagawa:
    Infineon Technologies
    Detalyadong Paglalarawan:
    MOSFET 2N-CH 30V 8A/11A 8-SOIC.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - JFET, Diode - Zener - Single, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - IGBTs - Single ...
    Kumpetensyang Pakinabang:
    We specialize in Infineon Technologies IRF8513TRPBF electronic components. IRF8513TRPBF can be shipped within 24 hours after order. If you have any demands for IRF8513TRPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF8513TRPBF Mga katangian ng produkto

    Bilang ng Bahagi : IRF8513TRPBF
    Tagagawa : Infineon Technologies
    Paglalarawan : MOSFET 2N-CH 30V 8A/11A 8-SOIC
    Serye : HEXFET®
    Katayuan ng Bahagi : Obsolete
    Uri ng FET : 2 N-Channel (Dual)
    Tampok ng FET : Logic Level Gate
    Drain sa Source Voltage (Vdss) : 30V
    Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 8A, 11A
    Rds On (Max) @ Id, Vgs : 15.5 mOhm @ 8A, 10V
    Vgs (th) (Max) @ Id : 2.35V @ 25µA
    Gate Charge (Qg) (Max) @ Vgs : 8.6nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : 766pF @ 15V
    Kapangyarihan - Max : 1.5W, 2.4W
    Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)
    Package ng Tagabigay ng Device : 8-SO

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