SQS966ENW-T1_GE3 Pagpepresyo (USD) [218486pcs Stock]
- 1 pcs$0.16929
- Bilang ng Bahagi:
- SQS966ENW-T1_GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CHAN 60V.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Mga Rectifier ng Bridge, Mga Transistor - FET, MOSFET - RF, Mga Transistor - Bipolar (BJT) - RF, Mga module ng Power driver, Transistors - IGBTs - Single, Transistor - IGBTs - Arrays and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SQS966ENW-T1_GE3 electronic components. SQS966ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS966ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS966ENW-T1_GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SQS966ENW-T1_GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CHAN 60V
Serye :
Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
36 mOhm @ 1.25A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
572pF @ 25V
Kapangyarihan - Max :
27.8W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
PowerPAK® 1212-8W
Package ng Tagabigay ng Device :
PowerPAK® 1212-8W
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