BSG0810NDIATMA1 Pagpepresyo (USD) [83416pcs Stock]
- 1 pcs$0.46874
- 5,000 pcs$0.46121
- Bilang ng Bahagi:
- BSG0810NDIATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 25V 19A/39A 8TISON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Arrays, Transistor - IGBTs - Mga Module, Diode - Rectifiers - Arrays, Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Single and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSG0810NDIATMA1 electronic components. BSG0810NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSG0810NDIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSG0810NDIATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSG0810NDIATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 25V 19A/39A 8TISON
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual) Asymmetrical
Tampok ng FET :
Logic Level Gate, 4.5V Drive
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
19A, 39A
Rds On (Max) @ Id, Vgs :
3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1040pF @ 12V
Kapangyarihan - Max :
2.5W
Temperatura ng pagpapatakbo :
-55°C ~ 155°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerTDFN
Package ng Tagabigay ng Device :
PG-TISON-8
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