BSC072N03LDGATMA1 Pagpepresyo (USD) [160653pcs Stock]
- 1 pcs$0.23023
- Bilang ng Bahagi:
- BSC072N03LDGATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 11.5A 8TDSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Diode - Mga Rectifier ng Bridge, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Arrays and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSC072N03LDGATMA1 electronic components. BSC072N03LDGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC072N03LDGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC072N03LDGATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSC072N03LDGATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 30V 11.5A 8TDSON
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11.5A
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 15V
Kapangyarihan - Max :
57W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
PG-TDSON-8 Dual
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