IRF7910TRPBF Pagpepresyo (USD) [139505pcs Stock]
- 1 pcs$0.26514
- 4,000 pcs$0.22657
- Bilang ng Bahagi:
- IRF7910TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 12V 10A 8SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Diode - RF, Diode - Rectifiers - Arrays and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF7910TRPBF electronic components. IRF7910TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7910TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7910TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF7910TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 12V 10A 8SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A
Rds On (Max) @ Id, Vgs :
15 mOhm @ 8A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1730pF @ 6V
Kapangyarihan - Max :
2W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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