SSM6N35FE,LM Pagpepresyo (USD) [1336019pcs Stock]
- 1 pcs$0.03061
- 4,000 pcs$0.03045
- Bilang ng Bahagi:
- SSM6N35FE,LM
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 0.18A ES6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Transistors - IGBTs - Single, Transistor - Espesyal na Pakay, Diode - Zener - Single, Thyristors - DIACs, SIDACs and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage SSM6N35FE,LM electronic components. SSM6N35FE,LM can be shipped within 24 hours after order. If you have any demands for SSM6N35FE,LM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6N35FE,LM Mga katangian ng produkto
Bilang ng Bahagi :
SSM6N35FE,LM
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET 2N-CH 20V 0.18A ES6
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
180mA
Rds On (Max) @ Id, Vgs :
3 Ohm @ 50mA, 4V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
9.5pF @ 3V
Kapangyarihan - Max :
150mW
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-563, SOT-666
Package ng Tagabigay ng Device :
ES6 (1.6x1.6)
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