[4177pcs Stock]
- Bilang ng Bahagi:
- PMDPB42UN,115
- Tagagawa:
- NXP USA Inc.
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 3.9A HUSON6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Diode - Mga Rectifier ng Bridge, Mga Transistor - JFET, Diode - Zener - Arrays, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Single, Mga Transistor - FET, MOSFET - RF and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in NXP USA Inc. PMDPB42UN,115 electronic components. PMDPB42UN,115 can be shipped within 24 hours after order. If you have any demands for PMDPB42UN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDPB42UN,115 Mga katangian ng produkto
Bilang ng Bahagi :
PMDPB42UN,115
Tagagawa :
NXP USA Inc.
Paglalarawan :
MOSFET 2N-CH 20V 3.9A HUSON6
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.9A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 3.9A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
185pF @ 10V
Kapangyarihan - Max :
510mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-UDFN Exposed Pad
Package ng Tagabigay ng Device :
DFN2020-6
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