SSM6P35FE,LM Pagpepresyo (USD) [4110pcs Stock]
- 4,000 pcs$0.03393
- Bilang ng Bahagi:
- SSM6P35FE,LM
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET 2NCH 20V 100MA ES6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Programmable Unijunction, Thyristors - DIACs, SIDACs, Thyristors - Mga TRIAC, Transistor - IGBTs - Mga Module, Diode - Rectifiers - Arrays and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage SSM6P35FE,LM electronic components. SSM6P35FE,LM can be shipped within 24 hours after order. If you have any demands for SSM6P35FE,LM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6P35FE,LM Mga katangian ng produkto
Bilang ng Bahagi :
SSM6P35FE,LM
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET 2NCH 20V 100MA ES6
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 P-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100mA
Rds On (Max) @ Id, Vgs :
8 Ohm @ 50mA, 4V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
12.2pF @ 3V
Kapangyarihan - Max :
150mW
Temperatura ng pagpapatakbo :
150°C
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-563, SOT-666
Package ng Tagabigay ng Device :
ES6
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