Bilang ng Bahagi :
EPC2110ENGRT
Paglalarawan :
GAN TRANS 2N-CH 120V BUMPED DIE
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual) Common Source
Tampok ng FET :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
120V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.4A
Rds On (Max) @ Id, Vgs :
60 mOhm @ 4A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
80pF @ 60V
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Die