IXFA34N65X2 Pagpepresyo (USD) [17221pcs Stock]
- 1 pcs$2.39300
- Bilang ng Bahagi:
- IXFA34N65X2
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 34A TO-263.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Diode - RF, Thyristors - Mga SCR and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFA34N65X2 electronic components. IXFA34N65X2 can be shipped within 24 hours after order. If you have any demands for IXFA34N65X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA34N65X2 Mga katangian ng produkto
Bilang ng Bahagi :
IXFA34N65X2
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 650V 34A TO-263
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
34A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
105 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3330pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
540W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-263AA
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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