[13436pcs Stock]
- Bilang ng Bahagi:
- IRF6691TR1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V 32A DIRECTFET.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Diode - Zener - Arrays, Transistor - IGBTs - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Arrays, Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF6691TR1 electronic components. IRF6691TR1 can be shipped within 24 hours after order. If you have any demands for IRF6691TR1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6691TR1 Mga katangian ng produkto
Bilang ng Bahagi :
IRF6691TR1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 20V 32A DIRECTFET
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
32A (Ta), 180A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.8 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
71nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
6580pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
2.8W (Ta), 89W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DIRECTFET™ MT
Pakete / Kaso :
DirectFET™ Isometric MT
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