[3537pcs Stock]
- Bilang ng Bahagi:
- BUK9E2R3-40E,127
- Tagagawa:
- NXP USA Inc.
- Detalyadong Paglalarawan:
- MOSFET N-CH 40V 120A I2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCR - Mga Module, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Arrays and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in NXP USA Inc. BUK9E2R3-40E,127 electronic components. BUK9E2R3-40E,127 can be shipped within 24 hours after order. If you have any demands for BUK9E2R3-40E,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK9E2R3-40E,127 Mga katangian ng produkto
Bilang ng Bahagi :
BUK9E2R3-40E,127
Tagagawa :
NXP USA Inc.
Paglalarawan :
MOSFET N-CH 40V 120A I2PAK
Serye :
TrenchMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
2.2 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
87.8nC @ 5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
13160pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
293W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I2PAK
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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