IXTY2N100P Pagpepresyo (USD) [45069pcs Stock]
- 1 pcs$1.00270
- 70 pcs$0.99771
- Bilang ng Bahagi:
- IXTY2N100P
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 2A TO-252.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF, Mga Transistor - JFET, Transistor - IGBTs - Arrays, Transistor - Espesyal na Pakay and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTY2N100P electronic components. IXTY2N100P can be shipped within 24 hours after order. If you have any demands for IXTY2N100P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY2N100P Mga katangian ng produkto
Bilang ng Bahagi :
IXTY2N100P
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 2A TO-252
Serye :
Polar™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
24.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
655pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
86W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252, (D-Pak)
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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