IXYS High Voltage Reverse Conducting (BiMOSFET™) IGBTs
IXYS Very High Voltage Series 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.
Features
"Free" intrinsic body diodeHigh power densityHigh frequency operationLow conduction lossesMOS gate turn on for drive simplicity
Applications
Switched-mode and resonant-mode power suppliesUninterruptible Power Supplies (UPS)Laser and X-ray generatorsCapacitor discharge circuits
Ixys Newest
IXYS D2 Series 100V-1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a ‘normally-on’ mode.
Date: 2019-09-25IXYS BiMOSFETs Series 3000V Surface Mount Power Device (SMPD) Packages are an expansion of the ISOPLUS™ package portfolio that include modules that can be assembled in standard surface mount (SMD) soldering processes.
Date: 2019-09-24IXYS Very High Voltage Series 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs.
Date: 2019-09-24IXYS X4-Class 135V-150V Power MOSFETs are developed using a charge compensation principle and proprietary process technology.
Date: 2019-06-26IXYS Integrated Circuits CPC1705Y Solid State Relay is a DC-switching, normally closed solid state relay.
Date: 2018-01-08IXYS Standard Rectifier Module features a 1600V and a 900A IDAV rating with a DCB ceramic package.
Date: 2017-12-13IXYS IXRFSMPD N-Channel Enhancement Mode MOSFETs offer a power module in an isolated, surface-mounted outline, offering the advantages of flexibility, automated assembly, and reduced package size.
Date: 2017-09-01IXYS IXIDM1401 IGBT Driver Module supports dual-channel power up to 3000V, switching to 250kHz, active clamping, and supply-voltage monitoring.
Date: 2017-07-25