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At this year's MWC in Barcelona, Samsung Semiconductor exhibited its latest solutions and products for mobile applications

Date: 2019-11-22

Reference server design guidelines for NGSFF SSD from Samsung describing Mission Peak architecture and other details.

Date: 2019-11-22

Watch the video to check out Samsung NF1 SSD, small form factor that has high capacity and compatibility.

Date: 2019-11-22

Greater memory will be a critical part of the design and implementation of 5G networks. To address the advanced memory needs of 5G networks, Samsung offers a growing array of products.

Date: 2019-11-22

Watch the video below to check out Samsung Z-SSD, an SSD that boasts a new level of performance.

Date: 2019-11-22

Samsung Z-SSD SZ985, a new type of Ultra-low Latency SSD for Enterprise and Data Centers

Date: 2019-11-22

Samsung announced today that 46 of its new product innovations have been recognized as CES® 2020 Innovation Awards winners, including three Best of Innovations accolades.

Date: 2019-11-22

Samsung’s new 256Gb V-NAND features industry’s fastest data transfer speed, while being the first to apply the ‘Toggle DDR 4.0’ NAND interface

Date: 2019-11-22

New V-NAND breaks through current cell stacking limitation in 3D NAND with the industry's first 100+ layer single-tier design for superior speed and power efficiency.

Date: 2019-11-22

The revolutionary flash technology, the sixth-generation V-NAND is perfectly suited for today’s and tomorrow’s data demands.

Date: 2019-11-22

Samsung’s PCI Gen4-based SSD with three core software technologies will help enterprises and service providers harness the power of future technological innovations.

Date: 2019-11-22

Samsung Electronics Co.. Ltd.. a global leader in advanced semiconductor technology solutions. has begun mass producing the industry’s first two gigabyte (GB). low power double-data-rate 3 (LPDDR3) memory. using 30 nanometer (nm) class* technology. for next-generation mobile devices.

Date: 2019-11-22

Samsung Electronics Co.. Ltd.. the world leader in advanced memory technology. today announced the industry's first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM. which is being produced at a 20 nanometer (nm) class* process node.

Date: 2019-11-22

the world leader in advanced memory technology. today announced the industry’s first mass production of three gigabyte (GB) low power double data rate 3 (LPDDR3) mobile DRAM. the highest density mobile memory solution for next-generation smartphones. which will bring a generation shift to the market from the 2GB packages that are widely used in current mobile devices

Date: 2019-11-22

Samsung Electronics Co.. Ltd.. the world leader in advanced memory technology. announced today that it has begun mass producing its six gigabit (Gb) low-power double data rate 3 (LPDDR3) mobile DRAM.

Date: 2019-11-22

Samsung Electronics Co.. Ltd.. announced today that it is mass producing the industry’s first 12-gigabit (Gb) LPDDR4 (low power. double data rate 4) mobile DRAM. based on its advan

Date: 2019-11-22

Samsung introducing the industry’s first 8-gigabyte (GB) LPDDR4 (low power. double data rate 4) mobile DRAM package

Date: 2019-11-22

The new 3-stack ISOCELL Fast 2L3 with integrated DRAM supports super-slow motion, low-light shooting, real-time HDR imaging, while minimizing picture distortion

Date: 2019-11-22

Discover Samsung's semiconductor solutions that are used in a wide array of automotive applications.

Date: 2019-11-22

Utilizing the industry's first 24Gb LPDDR4X chips, this highest-capacity uMCP makes 10+ GB memory solutions available to mid-market smartphone users.

Date: 2019-11-22