Bilang ng Bahagi :
IPS65R600E6AKMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 650V TO-251-3
Katayuan ng Bahagi :
Not For New Designs
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
7.3A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 100V
Power Dissipation (Max) :
63W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PG-TO251-3
Pakete / Kaso :
TO-251-3 Stub Leads, IPak