BSO080P03NS3EGXUMA1 Pagpepresyo (USD) [220828pcs Stock]
- 1 pcs$0.16749
- 2,500 pcs$0.15670
- Bilang ng Bahagi:
- BSO080P03NS3EGXUMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET P-CH 30V 12A 8DSO.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - IGBTs - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Arrays and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSO080P03NS3EGXUMA1 electronic components. BSO080P03NS3EGXUMA1 can be shipped within 24 hours after order. If you have any demands for BSO080P03NS3EGXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO080P03NS3EGXUMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSO080P03NS3EGXUMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET P-CH 30V 12A 8DSO
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
8 mOhm @ 14.8A, 10V
Vgs (th) (Max) @ Id :
3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
81nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
6750pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
1.6W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-DSO-8
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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