Infineon Technologies - IRF9Z34NSTRRPBF

KEY Part #: K6419913

IRF9Z34NSTRRPBF Pagpepresyo (USD) [143745pcs Stock]

  • 1 pcs$0.25731
  • 800 pcs$0.24699

Bilang ng Bahagi:
IRF9Z34NSTRRPBF
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET P-CH 55V 19A D2PAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
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Kumpetensyang Pakinabang:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF9Z34NSTRRPBF Mga katangian ng produkto

Bilang ng Bahagi : IRF9Z34NSTRRPBF
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET P-CH 55V 19A D2PAK
Serye : HEXFET®
Katayuan ng Bahagi : Not For New Designs
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 19A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 620pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 3.8W (Ta), 68W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : D2PAK
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB