2N7000 Pagpepresyo (USD) [198981pcs Stock]
- 1 pcs$0.18588
- 10 pcs$0.13526
- 100 pcs$0.07954
- 500 pcs$0.04503
- 1,000 pcs$0.03452
- Bilang ng Bahagi:
- 2N7000
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 200MA TO-92.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Diode - Zener - Single, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Diode - RF, Diode - Rectifiers - Arrays and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor 2N7000 electronic components. 2N7000 can be shipped within 24 hours after order. If you have any demands for 2N7000, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N7000 Mga katangian ng produkto
Bilang ng Bahagi :
2N7000
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 60V 200MA TO-92
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
200mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
400mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-92-3
Pakete / Kaso :
TO-226-3, TO-92-3 (TO-226AA)
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