Infineon Technologies - IPP024N06N3GXKSA1

KEY Part #: K6417519

IPP024N06N3GXKSA1 Pagpepresyo (USD) [33550pcs Stock]

  • 1 pcs$1.22840
  • 500 pcs$1.06922

Bilang ng Bahagi:
IPP024N06N3GXKSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 60V 120A TO220-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver, Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPP024N06N3GXKSA1 electronic components. IPP024N06N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP024N06N3GXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP024N06N3GXKSA1 Mga katangian ng produkto

Bilang ng Bahagi : IPP024N06N3GXKSA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 60V 120A TO220-3
Serye : OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs : 275nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 23000pF @ 30V
Tampok ng FET : -
Power Dissipation (Max) : 250W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : PG-TO220-3
Pakete / Kaso : TO-220-3

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