[1354pcs Stock]
- Bilang ng Bahagi:
- IRLHM630TR2PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 21A PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Arrays, Diode - Zener - Single, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRLHM630TR2PBF electronic components. IRLHM630TR2PBF can be shipped within 24 hours after order. If you have any demands for IRLHM630TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLHM630TR2PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRLHM630TR2PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 21A PQFN
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
21A (Ta), 40A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
3.5 mOhm @ 20A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
3170pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.7W (Ta), 37W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PQFN (3x3)
Pakete / Kaso :
8-VQFN Exposed Pad
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