[3219pcs Stock]
- Bilang ng Bahagi:
- JANSR2N7381
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- N CHANNEL MOSFET TO-257 RAD.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Diode - Mga Rectifier ng Bridge, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation JANSR2N7381 electronic components. JANSR2N7381 can be shipped within 24 hours after order. If you have any demands for JANSR2N7381, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JANSR2N7381 Mga katangian ng produkto
Bilang ng Bahagi :
JANSR2N7381
Tagagawa :
Microsemi Corporation
Paglalarawan :
N CHANNEL MOSFET TO-257 RAD
Serye :
Military, MIL-PRF-19500/614
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9.4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
12V
Rds On (Max) @ Id, Vgs :
490 mOhm @ 9.4A, 12V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 12V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta), 75W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-257
Pakete / Kaso :
TO-257-3
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