[2223pcs Stock]
- Bilang ng Bahagi:
- SSM3K01T(TE85L,F)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 3.2A TSM.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage SSM3K01T(TE85L,F) electronic components. SSM3K01T(TE85L,F) can be shipped within 24 hours after order. If you have any demands for SSM3K01T(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K01T(TE85L,F) Mga katangian ng produkto
Bilang ng Bahagi :
SSM3K01T(TE85L,F)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 30V 3.2A TSM
Serye :
π-MOSVI
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 4V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 1.6A, 4V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
152pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
1.25W (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TSM
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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