[12967pcs Stock]
- Bilang ng Bahagi:
- IXFR12N100
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 10A ISOPLUS247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Arrays, Diode - RF and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFR12N100 electronic components. IXFR12N100 can be shipped within 24 hours after order. If you have any demands for IXFR12N100, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFR12N100 Mga katangian ng produkto
Bilang ng Bahagi :
IXFR12N100
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 10A ISOPLUS247
Serye :
HiPerFET™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
1.1 Ohm @ 6A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
ISOPLUS247™
Pakete / Kaso :
ISOPLUS247™
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