FDN359BN Pagpepresyo (USD) [668296pcs Stock]
- 1 pcs$0.05535
- Bilang ng Bahagi:
- FDN359BN
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 2.7A SSOT3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Diode - Zener - Single, Thyristors - Mga TRIAC, Diode - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDN359BN electronic components. FDN359BN can be shipped within 24 hours after order. If you have any demands for FDN359BN, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDN359BN Mga katangian ng produkto
Bilang ng Bahagi :
FDN359BN
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 30V 2.7A SSOT3
Serye :
PowerTrench®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.7A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
46 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
500mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SuperSOT-3
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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