ES6U1T2R Pagpepresyo (USD) [701059pcs Stock]
- 1 pcs$0.05833
- 8,000 pcs$0.05804
- Bilang ng Bahagi:
- ES6U1T2R
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- MOSFET P-CH 12V 1.3A WEMT6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Diode - Mga Rectifier ng Bridge, Thyristors - SCR - Mga Module, Thyristors - Mga TRIAC, Transistor - IGBTs - Mga Module, Diode - Rectifiers - Arrays, Transistor - Mga FET, MOSFET - Arrays and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor ES6U1T2R electronic components. ES6U1T2R can be shipped within 24 hours after order. If you have any demands for ES6U1T2R, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES6U1T2R Mga katangian ng produkto
Bilang ng Bahagi :
ES6U1T2R
Tagagawa :
Rohm Semiconductor
Paglalarawan :
MOSFET P-CH 12V 1.3A WEMT6
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
260 mOhm @ 1.3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
2.4nC @ 4.5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 6V
Tampok ng FET :
Schottky Diode (Isolated)
Power Dissipation (Max) :
700mW (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
6-WEMT
Pakete / Kaso :
SOT-563, SOT-666
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