[2154pcs Stock]
- Bilang ng Bahagi:
- RJK2009DPM-00#T0
- Tagagawa:
- Renesas Electronics America
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 40A TO3PFM.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Mga Transistor - JFET, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistors - IGBTs - Single, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Single and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Renesas Electronics America RJK2009DPM-00#T0 electronic components. RJK2009DPM-00#T0 can be shipped within 24 hours after order. If you have any demands for RJK2009DPM-00#T0, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK2009DPM-00#T0 Mga katangian ng produkto
Bilang ng Bahagi :
RJK2009DPM-00#T0
Tagagawa :
Renesas Electronics America
Paglalarawan :
MOSFET N-CH 200V 40A TO3PFM
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
40A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
36 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
60W (Tc)
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-3PFM
Pakete / Kaso :
TO-3PFM, SC-93-3
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