[8582pcs Stock]
- Bilang ng Bahagi:
- NTD4857N-1G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 25V 12A IPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Single, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Mga module ng Power driver, Thyristors - DIACs, SIDACs and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NTD4857N-1G electronic components. NTD4857N-1G can be shipped within 24 hours after order. If you have any demands for NTD4857N-1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTD4857N-1G Mga katangian ng produkto
Bilang ng Bahagi :
NTD4857N-1G
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 25V 12A IPAK
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Ta), 78A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.7 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1960pF @ 12V
Tampok ng FET :
-
Power Dissipation (Max) :
1.31W (Ta), 56.6W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I-PAK
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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