[1517pcs Stock]
- Bilang ng Bahagi:
- IRFH8337TR2PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 9.7A 5X6 PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga SCR, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Mga Module, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFH8337TR2PBF electronic components. IRFH8337TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH8337TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8337TR2PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFH8337TR2PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 9.7A 5X6 PQFN
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Ta), 35A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
12.8 mOhm @ 16.2A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
790pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
3.2W (Ta), 27W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PQFN (5x6)
Pakete / Kaso :
8-PowerTDFN
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