[13055pcs Stock]
- Bilang ng Bahagi:
- IRF7807VD1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 8.3A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga TRIAC, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - RF, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF7807VD1 electronic components. IRF7807VD1 can be shipped within 24 hours after order. If you have any demands for IRF7807VD1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7807VD1 Mga katangian ng produkto
Bilang ng Bahagi :
IRF7807VD1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 8.3A 8-SOIC
Serye :
FETKY™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8.3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
Schottky Diode (Isolated)
Power Dissipation (Max) :
2.5W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SO
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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