APTC90DAM60T1G Pagpepresyo (USD) [2215pcs Stock]
- 100 pcs$21.96250
- Bilang ng Bahagi:
- APTC90DAM60T1G
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- MOSFET N-CH 900V 59A SP1.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Diode - Rectifiers - Single, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga TRIAC, Transistors - IGBTs - Single and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APTC90DAM60T1G electronic components. APTC90DAM60T1G can be shipped within 24 hours after order. If you have any demands for APTC90DAM60T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTC90DAM60T1G Mga katangian ng produkto
Bilang ng Bahagi :
APTC90DAM60T1G
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET N-CH 900V 59A SP1
Serye :
CoolMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
900V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
59A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 52A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs :
540nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
13600pF @ 100V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
462W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
SP1
Pakete / Kaso :
SP1
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