[12706pcs Stock]
- Bilang ng Bahagi:
- IRFSL59N10D
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 59A TO-262.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Diode - Zener - Arrays, Diode - Rectifiers - Arrays and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFSL59N10D electronic components. IRFSL59N10D can be shipped within 24 hours after order. If you have any demands for IRFSL59N10D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFSL59N10D Mga katangian ng produkto
Bilang ng Bahagi :
IRFSL59N10D
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 100V 59A TO-262
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
59A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 35.4A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2450pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
3.8W (Ta), 200W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-262
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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