SIZ900DT-T1-GE3 Pagpepresyo (USD) [3690pcs Stock]
- 3,000 pcs$0.33301
- Bilang ng Bahagi:
- SIZ900DT-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 24A POWERPAIR.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Thyristors - Mga TRIAC, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCR - Mga Module and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIZ900DT-T1-GE3 electronic components. SIZ900DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ900DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ900DT-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIZ900DT-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2N-CH 30V 24A POWERPAIR
Serye :
TrenchFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Half Bridge)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
24A, 28A
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 19.4A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1830pF @ 15V
Kapangyarihan - Max :
48W, 100W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-PowerPair™
Package ng Tagabigay ng Device :
6-PowerPair™
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