BSO612CVGHUMA1 Pagpepresyo (USD) [210131pcs Stock]
- 1 pcs$0.17602
- 2,500 pcs$0.16896
- Bilang ng Bahagi:
- BSO612CVGHUMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 60V 2A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Mga Module, Transistor - IGBTs - Arrays, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga SCR and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSO612CVGHUMA1 electronic components. BSO612CVGHUMA1 can be shipped within 24 hours after order. If you have any demands for BSO612CVGHUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO612CVGHUMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSO612CVGHUMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N/P-CH 60V 2A 8-SOIC
Serye :
SIPMOS®
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3A, 2A
Rds On (Max) @ Id, Vgs :
120 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
340pF @ 25V
Kapangyarihan - Max :
2W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
PG-DSO-8
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