Vishay Siliconix - SQJB42EP-T1_GE3

KEY Part #: K6525276

SQJB42EP-T1_GE3 Pagpepresyo (USD) [164478pcs Stock]

  • 1 pcs$0.22488
  • 3,000 pcs$0.19003

Bilang ng Bahagi:
SQJB42EP-T1_GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET 2 N-CH 40V POWERPAK SO8.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Single, Diode - Rectifiers - Arrays and Diode - Zener - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SQJB42EP-T1_GE3 electronic components. SQJB42EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB42EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJB42EP-T1_GE3 Mga katangian ng produkto

Bilang ng Bahagi : SQJB42EP-T1_GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET 2 N-CH 40V POWERPAK SO8
Serye : Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : 40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 30A (Tc)
Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1500pF @ 25V
Kapangyarihan - Max : 48W
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : PowerPAK® SO-8 Dual
Package ng Tagabigay ng Device : PowerPAK® SO-8 Dual