Infineon Technologies - IPG20N06S4L14AATMA1

KEY Part #: K6525245

IPG20N06S4L14AATMA1 Pagpepresyo (USD) [147459pcs Stock]

  • 1 pcs$0.25083
  • 5,000 pcs$0.23012

Bilang ng Bahagi:
IPG20N06S4L14AATMA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET 2N-CH 8TDSON.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Diode - RF, Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPG20N06S4L14AATMA1 electronic components. IPG20N06S4L14AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N06S4L14AATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPG20N06S4L14AATMA1 Mga katangian ng produkto

Bilang ng Bahagi : IPG20N06S4L14AATMA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET 2N-CH 8TDSON
Serye : Automotive, AEC-Q101, OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 20A
Rds On (Max) @ Id, Vgs : 13.7 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 2890pF @ 25V
Kapangyarihan - Max : 50W
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-PowerVDFN
Package ng Tagabigay ng Device : PG-TDSON-8-10