Diodes Incorporated - DMN2019UTS-13

KEY Part #: K6522949

DMN2019UTS-13 Pagpepresyo (USD) [539680pcs Stock]

  • 1 pcs$0.06854
  • 2,500 pcs$0.06102

Bilang ng Bahagi:
DMN2019UTS-13
Tagagawa:
Diodes Incorporated
Detalyadong Paglalarawan:
MOSFET 2N-CH 20V 5.4A TSSOP-8.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Arrays, Transistor - Programmable Unijunction, Diode - Rectifiers - Single, Transistor - IGBTs - Arrays, Diode - RF, Mga module ng Power driver and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Diodes Incorporated DMN2019UTS-13 electronic components. DMN2019UTS-13 can be shipped within 24 hours after order. If you have any demands for DMN2019UTS-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2019UTS-13 Mga katangian ng produkto

Bilang ng Bahagi : DMN2019UTS-13
Tagagawa : Diodes Incorporated
Paglalarawan : MOSFET 2N-CH 20V 5.4A TSSOP-8
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual) Common Drain
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 5.4A
Rds On (Max) @ Id, Vgs : 18.5 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 143pF @ 10V
Kapangyarihan - Max : 780mW
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-TSSOP (0.173", 4.40mm Width)
Package ng Tagabigay ng Device : 8-TSSOP

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