DMN2019UTS-13 Pagpepresyo (USD) [539680pcs Stock]
- 1 pcs$0.06854
- 2,500 pcs$0.06102
- Bilang ng Bahagi:
- DMN2019UTS-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 5.4A TSSOP-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Thyristors - SCR - Mga Module, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Single, Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Arrays and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN2019UTS-13 electronic components. DMN2019UTS-13 can be shipped within 24 hours after order. If you have any demands for DMN2019UTS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2019UTS-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMN2019UTS-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2N-CH 20V 5.4A TSSOP-8
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual) Common Drain
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.4A
Rds On (Max) @ Id, Vgs :
18.5 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
143pF @ 10V
Kapangyarihan - Max :
780mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-TSSOP (0.173", 4.40mm Width)
Package ng Tagabigay ng Device :
8-TSSOP
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