Infineon Technologies - IPW60R099C7XKSA1

KEY Part #: K6416304

IPW60R099C7XKSA1 Pagpepresyo (USD) [13284pcs Stock]

  • 1 pcs$2.98354
  • 10 pcs$2.66447
  • 100 pcs$2.18503
  • 500 pcs$1.76933
  • 1,000 pcs$1.49221

Bilang ng Bahagi:
IPW60R099C7XKSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 600V 22A TO247-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF, Transistors - IGBTs - Single, Diode - RF, Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - JFET, Transistor - Espesyal na Pakay and Transistor - Bipolar (BJT) - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPW60R099C7XKSA1 electronic components. IPW60R099C7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R099C7XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW60R099C7XKSA1 Mga katangian ng produkto

Bilang ng Bahagi : IPW60R099C7XKSA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 600V 22A TO247-3
Serye : CoolMOS™ C7
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 14A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 9.7A, 10V
Vgs (th) (Max) @ Id : 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1819pF @ 400V
Tampok ng FET : -
Power Dissipation (Max) : 110W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : PG-TO247-3
Pakete / Kaso : TO-247-3