Vishay Siliconix - SI1422DH-T1-GE3

KEY Part #: K6416316

SI1422DH-T1-GE3 Pagpepresyo (USD) [12106pcs Stock]

  • 3,000 pcs$0.06743

Bilang ng Bahagi:
SI1422DH-T1-GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET N-CH 12V 4A SC70-6.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Single, Diode - Zener - Arrays, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Single and Diode - Rectifiers - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SI1422DH-T1-GE3 electronic components. SI1422DH-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1422DH-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1422DH-T1-GE3 Mga katangian ng produkto

Bilang ng Bahagi : SI1422DH-T1-GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET N-CH 12V 4A SC70-6
Serye : TrenchFET®
Katayuan ng Bahagi : Obsolete
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 26 mOhm @ 5.1A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 8V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 725pF @ 6V
Tampok ng FET : -
Power Dissipation (Max) : 1.56W (Ta), 2.8W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : SC-70-6 (SOT-363)
Pakete / Kaso : 6-TSSOP, SC-88, SOT-363

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