[12841pcs Stock]
- Bilang ng Bahagi:
- IRFI1310N
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 24A TO220FP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Diode - Zener - Arrays, Diode - Mga Rectifier ng Bridge, Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFI1310N electronic components. IRFI1310N can be shipped within 24 hours after order. If you have any demands for IRFI1310N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI1310N Mga katangian ng produkto
Bilang ng Bahagi :
IRFI1310N
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 100V 24A TO220FP
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
24A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
36 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
56W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB Full-Pak
Pakete / Kaso :
TO-220-3 Full Pack
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