SIZ926DT-T1-GE3 Pagpepresyo (USD) [162374pcs Stock]
- 1 pcs$0.22893
- 3,000 pcs$0.22779
- Bilang ng Bahagi:
- SIZ926DT-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2 N-CH 25V 8-POWERPAIR.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Thyristors - Mga SCR, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver, Thyristors - SCR - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga TRIAC and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIZ926DT-T1-GE3 electronic components. SIZ926DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ926DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ926DT-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIZ926DT-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2 N-CH 25V 8-POWERPAIR
Serye :
TrenchFET® Gen IV
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs :
4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V, 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
925pF @ 10V, 2150pF @ 10V
Kapangyarihan - Max :
20.2W, 40W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerWDFN
Package ng Tagabigay ng Device :
8-PowerPair® (6x5)
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