IXTY1R4N120P Pagpepresyo (USD) [41564pcs Stock]
- 1 pcs$1.08727
- 70 pcs$1.08186
- Bilang ng Bahagi:
- IXTY1R4N120P
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1200V 1.4A TO-252.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Espesyal na Pakay, Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTY1R4N120P electronic components. IXTY1R4N120P can be shipped within 24 hours after order. If you have any demands for IXTY1R4N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY1R4N120P Mga katangian ng produkto
Bilang ng Bahagi :
IXTY1R4N120P
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1200V 1.4A TO-252
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252, (D-Pak)
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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