DMT10H017LPD-13 Pagpepresyo (USD) [113872pcs Stock]
- 1 pcs$0.32482
- Bilang ng Bahagi:
- DMT10H017LPD-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET BVDSS 61V-100V POWERDI50.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Single, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMT10H017LPD-13 electronic components. DMT10H017LPD-13 can be shipped within 24 hours after order. If you have any demands for DMT10H017LPD-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT10H017LPD-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMT10H017LPD-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET BVDSS 61V-100V POWERDI50
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
54.7A (Tc)
Rds On (Max) @ Id, Vgs :
17.4 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1986pF @ 50V
Kapangyarihan - Max :
2.2W (Ta), 78W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerTDFN
Package ng Tagabigay ng Device :
PowerDI5060-8
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