Vishay Siliconix - SI4967DY-T1-E3

KEY Part #: K6524015

[3973pcs Stock]


    Bilang ng Bahagi:
    SI4967DY-T1-E3
    Tagagawa:
    Vishay Siliconix
    Detalyadong Paglalarawan:
    MOSFET 2P-CH 12V 8SOIC.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Single, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays, Transistor - Espesyal na Pakay, Diode - Rectifiers - Arrays and Diode - Rectifiers - Single ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Siliconix SI4967DY-T1-E3 electronic components. SI4967DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4967DY-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI4967DY-T1-E3 Mga katangian ng produkto

    Bilang ng Bahagi : SI4967DY-T1-E3
    Tagagawa : Vishay Siliconix
    Paglalarawan : MOSFET 2P-CH 12V 8SOIC
    Serye : TrenchFET®
    Katayuan ng Bahagi : Obsolete
    Uri ng FET : 2 P-Channel (Dual)
    Tampok ng FET : Logic Level Gate
    Drain sa Source Voltage (Vdss) : 12V
    Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : -
    Rds On (Max) @ Id, Vgs : 23 mOhm @ 7.5A, 4.5V
    Vgs (th) (Max) @ Id : 450mV @ 250µA (Min)
    Gate Charge (Qg) (Max) @ Vgs : 55nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds : -
    Kapangyarihan - Max : 2W
    Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)
    Package ng Tagabigay ng Device : 8-SO